Increase of the device density on microelectronic chips could be constrained by the ability to dissipate the extremely high rates of heat generation. Thus, it is necessary to understand the mechanisms of heat generation and dissipation inside the device as well as their effects on electrical performance and reliability. The objective of this project is to concurrently transient study both the thermal and electrical characteristics of sub-micrometer silicon semiconductor devices by considering the nonequilibrium nature of hot electron and phonon, also their interactions in electrical and thermal fields. A coupled thermal and electrical model is developed for a silicon tructure consisting of the hydrodynamic equations for electron traort and energy conservation equations for phonon. The results indicate that, for one electric field the lattice temperature gradient has significant effect on the magnitude of electric current. The transient phonon temperature affects the device performance due to the change of mobility and gradient temperature of electron. At an external voltage of 0.1 V, calculations show that an increase in the junction boundary temperature by 100 °C, cause increasing the drain current by 16% at 3 picosecond and decreases it by 17% up to steady state condition. Key Words Hydrodynamic, Semiconductor, Heat Transfer, Phonon, Electron, Microscale.
