Nowadays with the advancement of technology and increasing the use of integrated circuit technology, the need for more precise modeling of semiconductor devices, especially transistors has been increased. Due to the nature of integrated circuits, the precision for designing and reducing the need for revision can drastically decrease cost and time. One of the most important issues encountered in the integrated circuits, especially at millimeter-wave frequencies, is the inaccuracy of the compression assumption for transistors and the dominance of the effects of electromagnetic waves propagation. In recent years, considerable efforts have been devoted to modeling. Among these efforts, estimation of descriptive compressive structure, behavior study with full-wave analysis or with the approximate transmission line model using numerical methods, pseudo-distributed analysis and analytical solution derivation for differential equations of approximate transmission line model, then finding approximate parameters for multi-port transistors, are more specific. Each of the proposed methods is subject to limitations. Extracting an analytical model which has less structural constraints and higher accuracy can increase the speed and accuracy of the design process. Although the proposed analytical equations have been provided a simpler way to design than numerical methods, these could not improve design process and required time. In this thesis, the analytical modeling has been considered and the corresponding relations for transistor parameters extracted as an electrical network. Also, a compact model according to known circuit models has been proposed by adding parasitic elements. This new model helps designers find how the transistor geometry affects on these parasitic elements. The extracted circuit model has been tested in quasi-distributed simulations and compared with common methods. It has been shown acceptable computational efficiency. Also, noise is a very important issue in radio and microwave systems. Efforts have been made to simulate distributed noise in transistors resulted in complex formulae. In this work, a compact circuit model was extracted and the validity range was investigated. Index-terms : field effect transistor, millimeter wave, modeling, noise, compact model, distributed circuit.