In recent years, electrical and magnetic properties of Graphene Nanoribbons have attracted much attention. We were motivated to this study by observing the effect of disorder on the electronic traort in nano structures. In this thesis, we first formed the tight-binding Hamiltonian of the system in real space and then we added Anderson disorder or quantum percolation in the model Hamiltonian. Then the eigenstates of the Hamiltonian have been calculated. To investigate the electrical traort properties of nanoribbons in the persence of disorder, we characterized localization of electron eigenstates by using inverse participation ratio (IPR). In fact, the strength of localization of Hamiltonian eigenstates are suitable parameters to review the traort in the system. Real Nanoribbo are isolated and surrounded by vacuum, so the effect of screened Coulomb interaction is weak. That's why in the last part of this thesis effect of electron-electron interactions on the density of states of the Nanoribbo was examined. We treated the interactions in an approximate way, using self-consistent real-space Hartree-Fock equations. Our calculation indicates the existance of a mobility edge in strongly disordered Graphene Nanoribbons which is in agreement with exprimental results. Key Words: Graphene Nanoribbons, Anderson disorder, quantum percolation, IPR, Hartree-Fock.