In this investigation Ni 47 Mn 40 Sn 13-x Ga x (x=0, 2, 4) ferromagnetic shape memory alloys were prepared by mechanical alloying. Mechanical alloying was done for 20 hours and XRD of samples were confirmed. XRD indicated that alloying for 20 hours was enough but for achieving one phase and better crystal order, samples were annealed at 850 o C. Before annealing the samples were placed in quartz tubes under vacuum condition. XRD indicated that in all samples dominant phase was austenite but peaks of martensite phase were observed and they increased by doping gallium. XRD patterns showed that lattice parameters reduced by doping gallium. Magnetic susceptibility was measured on samples. Magnetic susceptibility indicated that structure transition temperature increased but magnetic transition temperature didn ’ t change regularly with increasing gallium. Also thermal hysteresis gradually vanished by increasing gallium doping as a result of vanishing martensitic domains. VSM indicated that saturation magnetization decreased noticeably but coercivity increased by doping gallium. Electrical resistivity of lower level doped gallium samples indicated metallic behavior at high temperature and semiconductor behavior at low temperature, but high level doped sample indicated metallic behavior in all measuring temperatures.
