In this research, we tried to enhance low field magnetoresistance (LFMR) and temperature coefficient of resistance (TCR) by doping composite manganite with Ag 2 O, ZnAgO, WO 3 semiconductor. Furthermore, structural, electrical and magnetic properties of these composites is compared with pure manganite. Firstly, La 0.78 Ba 0.22 MnO 3 powder was synthesized by sol-gel method. Secondly the LBMO powders were added into amount 20% mol of Zn 99.03 Ag 0.07 O, 20% of mol Ag 2 O and 5,10,20,30% mol of WO 3 powders with ethanol (C 2 H 5 OH) solution, separately and dispersed via ultrasonic. The analysis showed that LBMO/ Ag 2 O, ZnAgO, WO 3 composites show different results although these composites synthesized with the same method. For LaBaMnO 3 /ZnAgO composite samples, some part of the ZnO was mainly segregated at the grain boundaries of LBMO and small amount ZnO dissolved in LBMO lattice. The presence of ZnO at the grain boundaries increases the disordered states at the surface of the grains and therefore the low temperature resistivity increased very quickly by adding ZnO. The spin dependent tunneling and scattering at the interfaces of the grain boundaries are responsible for the increasing of LFMR. By adding ZnO in the LBMO matrix, the metal-insulator transition temperature (T MI ) is reduced while the resistivity of the composite is increased. For LaBaMnO 3 /Ag 2 O composite sample, Ag 2 O admixing did not cause any significant change in Curie temperature and lattice parameter of the composites. Thus Ag did not substitute into the host LBMO matrix in LBMO/Ag composites. This means that there wao reaction between Ag and LBMO grain in composite. Generally, Ag provides a conducting channel between the grains which leads to increase conduction. The results also showed that an enhancement in magnetoresistance (MR) effect of the composites by applying magnetic field, however, Metal–insulator transition temperature ( T MI ) decreased. For LaBaMnO 3 /xWO 3 composite samples with x = 0, 0.1, 0.2, 0.3, 0.4 ( x is nominal molar fraction of WO 3 ), XRD patterns of the composites showed that new phase appeared in composites related to BaWO 4 . This indicate that reaction between LBMO and WO 3 in composite formed the second phase, by name of BaWO 4 . This compound segregated at the grain boundaries or surfaces of the LBMO grains and brought energy barriers to the electrical traort process. As compared to the pure LBMO, the resistivity and magnetoreistance of all the composites were increased. The reaction between tungsten trioxide atom and barium atoms in the manganite leads to the change in space group and increases unit cell volume. For all samples, enhanced low-field magnetoresistance was obtained in the composites.