(The compacted layer of titanium dioxide (TiO 2 ) doped by different percentages of aluminum was used in perovskite solar cell as the electron conducting layer and the effect of aluminum doping content on the properties of the fabricated cell was investigated. The compacted TiO 2 layer which doped by different amounts of aluminum was coated on the FTO substrate by two methods of spray pyrolysis with different thicknesses and spin coating. Using X-ray diffraction (XRD), ultraviolet (UV-Vis) spectroscopy, photoluminescence (PL), Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), four-point probe and electrochemical analysis, the structural, optical, microscopic and electrical properties of titania layers were investigated respectively. XRD results showed that by increasing aluminum content (from 0 to 5 mol%), the crystallite size and the crystalline plane distance were decreased while the TiO 2 lattice strain was increased. It was also found that increasing Al dopant level (from 0 to 5%), leads to decrease TiO 2 (011) peak intensity while diffraction intensity of TiO 2 (024) plane increases. Also the optical band gap energy of TiO 2 thin films exhibits a blue shift from 3.41 to 3.49 ev by incteasing in Al content, while the traarency, refractive index, grain size and surface roughness of TiO 2 layers were decreases. The results of the four-point probe and Mott-Schottky analysis did not show a marked change in electrical properties of TiO 2 layers by adding Al dopant, but the photoluminescence analysis showed that by increasing the Al amount from 0 to 1 %, the crystalline defects density were decreased while it was enhanced by further increasing in Al amount from 1 to 5 %. The results of current-voltage characteristics and electrochemical impedance spectroscopy (EIS) showed that the amount of Al content affects the photovoltaic properties of perovskite cells directly, so that by increasing the concentration of aluminum from zero to 1%, the open circuit voltage (V oc ), short-current density (Jsc) and cell efficiency were increased. Further increasing in Al amount from 1 to 5% caused a decrease in these values. Thus the cell made using a TiO 2 layer doped by 1% aluminum has the best photovoltaic characteristics among all the cells. This cell also has the lowest series resistance and the highest shunt resistance. The optimal thickness of the TiO 2 compact layer (which doped by 1% Al content) was measured at 60 nm. It was revealed that the cell which was made by spin coating method (TiO 2 compact layer) relatively has a better performance (8.81%) than the cell was made by spray pyrolysis method (8.61%). The perovskite layer was prepared by four methods of one-step, spin coating- spin coating, spin coating –dip coating and spin coating -physical vapor deposition (PVD). The best performance and stability of the layer is related to the layer which prepared by the spin coating -PVD method. The cell which made by the spin coating– dip coating in 15 mg/ml methyl ammonium iodide (MAI) solution was given the best performance compared to other cells (the cells which made by the same method and immersed in MAI solution with other concentrations ). It was also found that using of hole traort layer (HTM) not only improves the cell efficiency, but also significantly increases cell stability.