Today, with advancement of industry and decreasing the size of integrated circuits, demands for wireless data transmission has increased. A telecommunication receiver is composed of different blocks among which low noise amplifier (LNA) is more important. In this thesis, a LNA for low power applications in industrial, scientific and medical (ISM) band is introduced. The purpose of the design of this amplifier is to improve the performance and reduce its power consumption in order that it can be used in portable receivers. The proposed amplifier consists of two stages. In the first stage the current reuse technique is used to reduce the power consumption of the amplifier. In the second stage, the gm-boosting technique is used to increase the amplifier voltage gain. The main task of the first stage is to establish an input impedance matching and the second stage is used to increase the required gain. To reduce the power consumption of the proposed LNA, all transistors are biased in sub-threshold region. Another used technique is to put transistor bodies in forward biasing. Using this technique, the threshold voltage of the transistors is reduced, and leading to decrease the voltage bias, which can reduce the power consumption of the amplifier. In the input impedance matching of the proposed amplifier, the common source structure with wire bond inductor is used. By using wire bond inductor the amplifier chip area is reduced and the noise associated with on-chip inductor is also removed. The proposed low noise amplifier is designed and simulated in TSMC 180nm, 65nm CMOS technology. The LNA provides a voltage gain of 20dB with a noise figure of 6dB, third-order input intercept point (IIP3) -4.3dBm and moreover, good input impedance matching of -22dB at the operating frequency is obtained. The proposed amplifier needs 0.4-V supply voltage for biasing. The power consumption is only 200uW in 180nm technology and 70uW in 65nm technology. کلید واژه انگلیسی: Low noise amplifier, low power amplifier, gm-boosting technique, forward body bias transistor, ISM band, CMOS technology
