In this study the effect of substrate temperature on Antimony dopedTin Oxide (SnO 2 :Sb) thin films, which were deposited by Pulsed Laser Deposition (PLD) method, was investigated. Thin films were deposited at Room temperature, 200, 300, 400 and 600 o C and on Quartz glass and Silicon (100). The X-ray diffraction (XRD) patterns show tetragonal (rutile) structure was formed above 300 o C.FESEM images show smooth samples surface. Resistivity, Hall mobility and carrier concentration have been measured by Van der Pauw method. Depositedsamples at Room temperatures are almost by increasing the substrate temperature the electrical resistance insulator. It was found that the of changes resistivity depend on Hall mobility, carrier concentration and crystallite size. UV-Vis spectra of the samples show a high traarency in visible region. Band gap of the samples were measured to be between 3.26eV to 3.18eV. It was reduced by increasing substrate temperature, Hall mobility and crystallite size. The Photoluminescence (PL) results indicated that conduction mechanism of the system changes by substrate temperature. Fourier transform infrared spectroscopy (FTIR) investigation show, the chemical properties were in consent with others results. Kay word: Tin oxide, Thin film, puls laser deposition, Electrical, Optical and Structural.