Thin film coatings play an important role in the semiconductor industries and micro electromechanical and nano electromechanical equipments. In this paper, the doped silicon with donors and acceptors with different concentrations are studied and the dioxide silicone thin film is compared at different temperatures. From the results, it is observed that the concentrations highly affect the radiative properties of doped silicon multilayer at temperatures below 600 K. At temperatures below 600 K the concentration and the type of impurities have important effects on the radiative properties of the film. Moreover, the effects of ions are considerable for the concentrations higher than cm -3 . By increasing temperature, a lattice scattering phenomenon becomes dominant because of increasing the concentration of the phonons. For higher temperatures, this effect is reduced due to faster movement of energy carriers and a decrease in the Coulomb force between ions. More interestingly, it is observed from the results that the reflectance for the wavelength about 400 nm in the most cases is constant which offers a good choice for filtering ultraviolet waves. Key Words Doped Silicon, Donors, Acceptors, Nanoscale, Concentration and Temperature
